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Creators/Authors contains: "Bolshakov, Pavel"

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Positive Bias Instability in ZnO TFTs with Al ₂ O ₃ Gate Dielectric

https://doi.org/10.1109/IRPS.2019.8720547

Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Quevedo-Lopez, Manuel; Young, Chadwin D. (March 2019, 2019 IEEE International Reliability Physics Symposium (IRPS))

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Understanding the Effects of Low-Temperature Passivation and Annealing on ZnO TFTs Test Structures

https://doi.org/10.1109/ICMTS.2019.8730965

Rodriguez-Davila, Rodolfo A.; Bolshakov, Pavel; Young, Chadwin D.; Quevedo-Lopez, Manuel (March 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS))

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Relatively Low-Temperature Processing and Its Impact on Device Performance and Reliability

https://doi.org/10.1149/09001.0089ecst

Young, Chadwin D; Bolshakov, Pavel; Rodriguez Davila, Rodolfo A; Zhao, Peng; Smyth, C.; Quevedo-Lopez, M; Wallace, Robert M (April 2019, ECS Transactions)

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Contact Engineering for Dual-Gate MoS ₂ Transistors Using O ₂ Plasma Exposure

https://doi.org/10.1021/acsaelm.8b00059

Bolshakov, Pavel; Smyth, Christopher M.; Khosravi, Ava; Zhao, Peng; Hurley, Paul K.; Hinkle, Christopher L.; Wallace, Robert M.; Young, Chadwin D. (January 2019, ACS Applied Electronic Materials)

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Electrical characterization of process induced effects on non-silicon devices

https://doi.org/10.1109/ICICDT.2018.8399784

Young, Chadwin D.; Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Zhao, Peng; Khosravi, Ava; Mejia, Israel; Quevedo-Lopez, Manuel; Hinkle, Christopher L.; Wallace, Robert M. (June 2018, 2018 International Conference on IC Design & Technology (ICICDT))

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